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PTFC210202FC Datasheet Thermally-enhanced High Power Rf Ldmos Fet

Manufacturer: Infineon

Overview: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200.

General Description

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band.

Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

PTFC210202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz BW 24 60 20 Gain 16 12 Efficiency 40 20 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 28 ptfc210202fc_g1 -60 32 36 40 44 Average Output Power (dBm)

Key Features

  • Input matched.
  • Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB.
  • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power.
  • Integrated ESD protection : Human Body Mode.

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