PTFC210202FC Datasheet (Infineon)

Part PTFC210202FC
Description Thermally-Enhanced High Power RF LDMOS FET
Manufacturer Infineon
Size 545.71 KB
Infineon

PTFC210202FC Overview

Key Specifications

Description

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Key Features

  • Input matched
  • Typical CW performance, 2170 MHz, 28 V, combined outputs
  • Output power at P1dB = 28 W
  • Efficiency = 62%
  • Gain = 20.9 dB

Price & Availability

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