Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800
- 2200 MHz
Description
The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC210202FC Package H-37248-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz
3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz BW
20 Gain 16 12 Efficiency
40 20 0
PAR @ 0.01% CCDF 4
-20 -40
0 28 ptfc210202fc_g1
-60
32 36 40...
