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PTFC210202FC

PTFC210202FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
PTFC210202FC datasheet preview

PTFC210202FC Details

Part number PTFC210202FC
Datasheet PTFC210202FC Datasheet PDF (Download)
File Size 545.71 KB
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
PTFC210202FC page 2 PTFC210202FC page 3

PTFC210202FC Overview

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

PTFC210202FC Key Features

  • Input matched
  • Typical CW performance, 2170 MHz, 28 V, bined outputs
  • Output power at P1dB = 28 W
  • Efficiency = 62%
  • Gain = 20.9 dB
  • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power
  • Integrated ESD protection : Human Body Mode

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