• Part: PTFC210202FC
  • Description: Thermally-Enhanced High Power RF LDMOS FET
  • Manufacturer: Wolfspeed
  • Size: 1.10 MB
Download PTFC210202FC Datasheet PDF
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Datasheet Summary

Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 t MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS c process, this device provides excellent thermal performance and superior reliability. du Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 170 mA, ƒ = 2170 MHz o 3GPP WCDMA signal, r PAR = 7.5 dB, 3.84 MHz BW p 24 60 d 20 Gain 40 e 16 20 u 12 Efficiency 0 in 8 -20 PAR @ 0.01% CCDF t 4 -40 PTFC210202FC Package H-37248-4 Features - Input matched - Typical CW performance,...