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PTFC262808SV

Thermally-Enhanced High Power RF LDMOS FET

PTFC262808SV Features

* include input and output matching, high gain and thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262808SV Package H-37275G-6/2 with formed leads Gain (dB) Drain Efficiency (%) Two-carr

PTFC262808SV Datasheet (172.83 KB)

Preview of PTFC262808SV PDF

Datasheet Details

Part number:

PTFC262808SV

Manufacturer:

Infineon ↗

File Size:

172.83 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFC262808SV Thermally-Enhanced High Power LDMOS FET Infineon

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