PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET

Infineon

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Datasheet Details

Part number: PTFC262808SV
Manufacturer: Infineon ↗
File Size: 172.83 KB
Datasheet: PTFC262808SV-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

PTFC262808SV Product details

Description

The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262808SV Package H-37275G-6/2 with formed leads Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 19 40 18 Gain 17 35 30 16 25 Efficiency 15 20 14 15 13 c262808sv-gr1.

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Thermally-Enhanced High Power LDMOS FET Infineon

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