PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 * 2690 MHz .
The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2620 to 2690 MHz frequency ban.

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Datasheet Specifications

Part number: PTFC262808SV
Manufacturer: Infineon ↗
File Size: 172.83 KB
Datasheet: PTFC262808SV-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced package. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262808SV Package H-37275G-6/2 with formed leads Gain (dB) Drain Efficiency (%) Two-carr

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PTFC262808SV Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTFC262808SV-like datasheet