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PTF080451E Datasheet

Manufacturer: Infineon
PTF080451E datasheet preview

Datasheet Details

Part number PTF080451E
Datasheet PTF080451E_InfineonTechnologiesAG.pdf
File Size 158.52 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451E page 2 PTF080451E page 3

PTF080451E Overview

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

PTF080451E Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 22.5 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P-1dB = 60 W
  • Gain = 17 dB
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • Modulation Spectrum (dB)
  • 10 -20 -30 -40 -50 -60 -70 -80 -90
  • 0.1 3.2
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Part Number Description
PTF080451 LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601E LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601F LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901E LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901F LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080451E Distributor

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