Part number:
PTF080451E
Manufacturer:
Infineon ↗ Technologies AG
File Size:
158.52 KB
Description:
Ldmos rf power field effect transistor 45 w/ 869-960 mhz.
PTF080451E Datasheet (158.52 KB)
* Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Ex
PTF080451E Datasheet (158.52 KB)
PTF080451E
Infineon ↗ Technologies AG
158.52 KB
Ldmos rf power field effect transistor 45 w/ 869-960 mhz.
📁 Related Datasheet
PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
(Infineon Technologies AG)
PTF080451
LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz
Description
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for E.
PTF080101 - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
(Infineon Technologies AG)
.
PTF080101S - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
(Infineon Technologies AG)
.
PTF080601 - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
(Infineon Technologies AG)
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET .
PTF080601A - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
(Infineon Technologies AG)
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET .
PTF080601E - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
(Infineon Technologies AG)
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET .
PTF080601F - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
(Infineon Technologies AG)
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz
Description
The PTF080601 is a 60–W, internally matched GOLDMOS FET .
PTF080901 - LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
(Infineon Technologies AG)
PTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for E.
TAGS
Image Gallery
