PTF080451E - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

Infineon Technologies AG

Datasheet Details

Part number	PTF080451E
Manufacturer	Infineon ↗ Technologies AG
File Size	158.52 KB
Description	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Datasheet	PTF080451E_InfineonTechnologiesAG.pdf

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45.

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Published: Apr 16, 2005 |