Datasheet Details
| Part number | PTF080601A |
|---|---|
| Manufacturer | Infineon Technologies AG |
| File Size | 293.74 KB |
| Description | LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
| Datasheet |
 PTF080601A Datasheet
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General Description
The PTF080601 is a 60
W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.
Full gold metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.
Key Features
- Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
- 1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power.
- Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90.
- Efficiency (%).