PTF080601A
PTF080601A is LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz manufactured by Infineon.
Developmental PTF080601
LDMOS RF Power Field Effect Transistor 60 W, 860- 960 MHz
Description
The PTF080601 is a 60- W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
Typical EDGE Modulation Spectrum Performance Mod Spectrum vs. Output Power
VDD = 28 V, IDQ = 550 m A, f = 959.8 MHz
-20 Efficiency 50 45 40 35 30 400KHz 25 20 600KHz 15 10 5 32 34 36 38 40 42 44 46
Features
- - Broadband internal matching Typical EDGE performance
- Average output power = 30 W
- Gain = 18 d B
- Efficiency = 40% Typical CW performance
- Output power at P- 1d B = 90 W
- Gain = 17 d B
- Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
- Modulation Spectrum (d B)
-30 -40 -50 -60 -70 -80 -90
- Efficiency (%)
- -
- PTF080601A Package 20248 PTF080601E Package 30248 PTF080601F Package 31248
Output Power (d Bm)
RF Characteristics at TCASE = 25°C unless otherwise indicated
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 m A, POUT = 60 W PEP, f C = 960 MHz, tone spacing = 1000 k Hz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps η D IMD
Min
- -...
