PTF080601A Datasheet (Infineon)

Part PTF080601A
Description LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Category Transistor
Manufacturer Infineon
Size 293.74 KB
Infineon

PTF080601A Overview

Key Specifications

Max Operating Temp: 200 °C

Description

The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 30 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P–1dB = 90 W

Price & Availability

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