PTF080601F Datasheet (Infineon)

Part PTF080601F
Description LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Category Transistor
Manufacturer Infineon
Size 293.74 KB
Infineon

PTF080601F Overview

Description

The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 30 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P–1dB = 90 W