PTF080601E - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Product Overview

Infineon Technologies AG

Part number	PTF080601E
Manufacturer	Infineon Technologies AG
File Size	293.74 KB
Description	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Datasheet	PTF080601E Datasheet
Additional preview pages of the PTF080601E datasheet.

The PTF080601 is a 60

W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.

Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power.
Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90.
Efficiency (%).

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Published: Apr 16, 2005 |