PTF080601 Datasheet Ldmos Rf Power Field Effect Transistor 60 W/ 860-960 Mhz

Manufacturer: Infineon

Overview: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960.

Datasheet Details

Part number	PTF080601
Manufacturer	Infineon
File Size	293.74 KB
Description	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
Datasheet	PTF080601_InfineonTechnologiesAG.pdf

The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.

Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 90 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power.
Modulation Spectrum (dB) -30 -40 -50 -60 -70 -80 -90.
Efficiency (%).

Part Number	Description
PTF080601A	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601E	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601F	LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080101	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080451	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451E	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080901	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901E	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901F	LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz