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PTF080601

Manufacturer: Infineon

PTF080601 datasheet by Infineon.

PTF080601 datasheet preview

PTF080601 Datasheet Details

Part number PTF080601
Datasheet PTF080601_InfineonTechnologiesAG.pdf
File Size 293.74 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601 page 2 PTF080601 page 3

PTF080601 Overview

The PTF080601 is a 60 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modulation Spectrum Performance Mod Spectrum vs.

PTF080601 Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 30 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P-1dB = 90 W
  • Gain = 17 dB
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • Modulation Spectrum (dB)
  • 30 -40 -50 -60 -70 -80 -90
  • Efficiency (%)
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More Datasheets from Infineon

View all Infineon datasheets

Part Number Description
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601E LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601F LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080451 LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451E LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080901 LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901E LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz
PTF080901F LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080601 Distributor

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