LDMOS Datasheet | Specifications & PDF Download

Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510

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BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extrem

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MM1001 LDMOS TRANSISTOR 10W, 28V High Power RF LDMOS FETs Description The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-b

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Prelimin

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MK1040VP LDMOS TRANSISTOR 400W, 50V High Power RF LDMOS FETs Description The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET,

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MX0514 LDMOS TRANSISTOR Document Number: MX0514 Product Datasheet V1.0 140W, 28V High Power RF LDMOS FETs Description The MX0514 is a 140-watt capab

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MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs Description The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wi

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MX0525 LDMOS TRANSISTOR 250W, 28V High Power RF LDMOS FETs Description The MX0525 is a 250-watt, highly rugged, unmatched LDMOS FET, designed for wide

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polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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BLF178XR; BLF178XRS Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 1400 W extrem

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld t

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Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25N Rev. 2, 4/2015 RF Power LDMOS Transistors High Ruggedness N--Channel Enhanceme

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MU1502 LDMOS TRANSISTOR 1500MHz, 25W, 28V High Power RF LDMOS FETs Description The MU1502 is a 25-watt, highly rugged, unmatched LDMOS FET, designed f

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MR2002C LDMOS TRANSISTOR Document Number: MR2002C Preliminary Datasheet V1.1 20W, 28V High Power RF LDMOS FETs Description The MR2002C is a 20-watt

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MQ1090VP LDMOS TRANSISTOR 1000W, 50V High Power RF LDMOS FETs Description The MQ1090VP is a 1000-watt capable, high performance, internally matched LD

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