LDMOS Datasheet | Specifications & PDF Download

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General des

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PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 – 2170 MHz Description The PXFC211507SC is a 150-watt LDMOS FET intended f

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® SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON S

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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PTFA261301E PTFA261301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62 – 2.68 GHz Description The PTFA261301E and PTFA261301F are thermally

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BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General desc

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BLF8G22LS-220 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 220 W LDMOS power tran

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polyfet rf devices General Description LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband R

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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General de

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PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz Description The PXFC192207FH is a 220-watt LDMOS FET intended f

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PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt

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Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

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Confidential, Limited Internal Distribution PTFA080551E/F TCohnefirdmentaialll,yL-imEintehdaInntecrneadl DiHstirgibhutioPnower RF LDMOS FETs 5T5heWrm,

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PTGA090304MD Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 – 960 MHz Description The PTGA090304MD is a wideband, two-stage,

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BLF8G22LS-270 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power tran

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BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General des

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BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 130

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polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mil

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