Datasheet Details
Part number:
LX802
Manufacturer:
Polyfet RF Devices
File Size:
37.69 KB
Description:
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2
