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LX802

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX802 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

LX802 Datasheet (37.69 KB)

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Datasheet Details

Part number:

LX802

Manufacturer:

Polyfet RF Devices

File Size:

37.69 KB

Description:

Silicon gate enhancement mode rf power ldmos transistor.

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LX802 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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