Datasheet Specifications
- Part number
- LX803
- Manufacturer
- Polyfet RF Devices
- File Size
- 53.60 KB
- Datasheet
- LX803_PolyfetRFDevices.pdf
- Description
- SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Description
polyfet rf devices General .
Features
* low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum JunctionLX803 Distributors
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