LX803 Datasheet, Transistor, Polyfet RF Devices

LX803 Features

• Transistor low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RAT

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Part number:

LX803

Manufacturer:

Polyfet RF Devices

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53.60kb

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📄 Datasheet

Description:

Silicon gate enhancement mode rf power ldmos transistor. LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POW

LX803 Application

• Applications RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast F

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LX803

Polyfet RF Devices

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