Part number:
LX803
Manufacturer:
Polyfet RF Devices
File Size:
53.60 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum Junction
LX803
Polyfet RF Devices
53.60 KB
Silicon gate enhancement mode rf power ldmos transistor.
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