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LX803 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX803 Description

polyfet rf devices General .
LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications.

LX803 Features

* low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum Junction

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Datasheet Details

Part number
LX803
Manufacturer
Polyfet RF Devices
File Size
53.60 KB
Datasheet
LX803_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices LX803-like datasheet