LX803 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Product Overview

Polyfet RF Devices

Datasheet Details

Part number	LX803
Manufacturer	Polyfet RF Devices
File Size	53.60 KB
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Datasheet	LX803 Datasheet
Additional preview pages of the LX803 datasheet.

Product details

Description

LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications.RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others.Package Style LX2 TM "Polyfet" process

Features

low feedback and output capacitances HIGH.

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Published: Mar 30, 2005 |