LX803 Datasheet - Polyfet RF Devices

Datasheet Details

Part number:

LX803

Manufacturer:

Polyfet RF Devices

File Size:

53.60 KB

Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances HIGH EFFICIENCY, LINEAR, resulting in high Ft transistors with HIGH GAIN, LOW NOISE high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.25 o C/W Maximum Junction

LX803_PolyfetRFDevices.pdf

LX803 Datasheet Preview — Preview of LX803 PDF

LX803, SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LX803 Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications.

RF POWER LDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 45 Watts Single Ended Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Pac

LX803 Distributor

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LX803 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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