PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PXFC211507SC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 * 2170 MHz .
The PXFC211507SC is a 150-watt LDMOS FET intended for use in multi-standard cellular power ampliﬁer applications in the 2110 to 2170 MHz frequency ban.

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Datasheet Specifications

Part number: PXFC211507SC
Manufacturer: Infineon ↗
File Size: 193.28 KB
Datasheet: PXFC211507SC-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and a thermally-enhanced package with earless ﬂanges. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC211507SC Package H-37248G-4/2 (formed leads) Gain (dB) Drain Effic

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PXFC211507SC Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PXFC211507SC-like datasheet