PXFC192207SH - Thermally-Enhanced High Power RF LDMOS FET
PXFC192207SH Features
* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC192207SH Package H-37288G-4/2 Gain (dB) Efficiency (%) Two-carrie
