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PXFC192207SH Thermally-Enhanced High Power RF LDMOS FET

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Description

PXFC192207SH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 * 1990 MHz .
The PXFC192207SH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency ba.

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Features

* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC192207SH Package H-37288G-4/2 Gain (dB) Efficiency (%) Two-carrie

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PXFC192207SH-like datasheet