PXFC193808SV Datasheet, Fet, Infineon

✔ PXFC193808SV Features

include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provid

✔ PXFC193808SV Application

in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and a thermall

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PXFC193808SV

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PXFC193808SV is a 380-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880

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Infineon Technologies AG

RF MOSFET LDMOS H-37275G-6

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PXFC193808SVV1R250XTMA1

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PXFC193808SV Thermally-Enhanced High Power LDMOS FET Infineon