PXFC192207FH Datasheet - Infineon

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PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET

PXFC192207FH Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 * 1990 MHz .
The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency ba.

PXFC192207FH-Infineon.pdf

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Datasheet Details

Part number:

PXFC192207FH

Manufacturer:

Infineon ↗

File Size:

467.78 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,I

PXFC192207FH Distributors

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PXFC192207FH Thermally-Enhanced High Power LDMOS FET Infineon

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