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PXFC192207FH

Thermally-Enhanced High Power RF LDMOS FET

PXFC192207FH Features

* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V,I

PXFC192207FH General Description

The PXFC192207FH is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced L.

PXFC192207FH Datasheet (467.78 KB)

Preview of PXFC192207FH PDF

Datasheet Details

Part number:

PXFC192207FH

Manufacturer:

Infineon ↗

File Size:

467.78 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXFC192207FH Thermally-Enhanced High Power LDMOS FET Infineon

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