Part number:
PXFC192207NF
Manufacturer:
File Size:
345.21 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PXFC192207NF Datasheet (345.21 KB)
* include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VG
PXFC192207NF Datasheet (345.21 KB)
PXFC192207NF
345.21 KB
Thermally-enhanced high power rf ldmos fet.
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