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PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET

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Description

PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 * 1990 MHz .
The PXFC192207NF is a 220-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1990 MHz frequency ba.

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Features

* include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VG

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PXFC192207NF-like datasheet