PXFC192207NF - Thermally-Enhanced High Power RF LDMOS FET
PXFC192207NF Features
* include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VG
