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PXFC192207NF Datasheet - Infineon

PXFC192207NF Thermally-Enhanced High Power RF LDMOS FET

PXFC192207NF Features

* include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1600 mA, VG

PXFC192207NF-Infineon.pdf

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Datasheet Details

Part number:

PXFC192207NF

Manufacturer:

Infineon ↗

File Size:

345.21 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXFC192207NF PXFC192207NF Thermally-Enhanced High Power LDMOS FET Infineon

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