PXFC212551SC Datasheet - Infineon

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PXFC212551SC Thermally-Enhanced High Power RF LDMOS FET

PXFC212551SC Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2110 * 2170 MHz .
The PXFC212551SC is a 240-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency ba.

PXFC212551SC-Infineon.pdf

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Datasheet Details

Part number:

PXFC212551SC

Manufacturer:

Infineon ↗

File Size:

350.67 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =

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PXFC212551SC Thermally-Enhanced High Power LDMOS FET Infineon

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