Part number:
PXFC212551SC
Manufacturer:
File Size:
350.67 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PXFC212551SC Datasheet (350.67 KB)
* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =
PXFC212551SC Datasheet (350.67 KB)
PXFC212551SC
350.67 KB
Thermally-enhanced high power rf ldmos fet.
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