Datasheet Specifications
- Part number
- PXFC212551SC
- Manufacturer
- Infineon ↗
- File Size
- 350.67 KB
- Datasheet
- PXFC212551SC-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PXFC212551SC Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2110 * 2170 MHz .
Features
* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =PXFC212551SC Distributors
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