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PXFC212551SC Datasheet - Infineon

PXFC212551SC Thermally-Enhanced High Power RF LDMOS FET

PXFC212551SC Features

* include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =

PXFC212551SC Datasheet (350.67 KB)

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Datasheet Details

Part number:

PXFC212551SC

Manufacturer:

Infineon ↗

File Size:

350.67 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXFC212551SC Thermally-Enhanced High Power LDMOS FET Infineon

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