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NE5550979A - Silicon Power LDMOS FET

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Renesas

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NE5550979A Silicon Power LDMOS FET by Renesas - Datasheet Preview — Datasheet preview – NE5550979A

Datasheet Details

Part number	NE5550979A
Manufacturer	Renesas
File Size	802.93 KB
Description	Silicon Power LDMOS FET
Datasheet	NE5550979A Datasheet
Additional preview pages of the NE5550979A datasheet.

Product details

Features

High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High Linear gain : GL = 22 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge).
Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Published: Nov 10, 2013 |