NE5531079A Datasheet, Fet, Renesas

NE5531079A Features

• Fet
• High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDse

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NE5531079A

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📄 Datasheet

Description:

7.5v operation silicon rf power ldmos fet. The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.

NE5531079A Application

• Applications
• 460 MHz band radio systems
• 900 MHz band radio systems ORDERING INFORMATION Part Number Order Number Package Ma

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NE5531079A

Renesas

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