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NE5531079A Datasheet - Renesas

NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% p.

NE5531079A Features

* High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

* High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

* High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 m

NE5531079A-Renesas.pdf

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Datasheet Details

Part number:

NE5531079A

Manufacturer:

Renesas ↗

File Size:

154.22 KB

Description:

7.5v operation silicon rf power ldmos fet.

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TAGS

NE5531079A NE5531079A 7.5V OPERATION SILICON POWER LDMOS FET Renesas

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