NE5531079A - 7.5V OPERATION SILICON RF POWER LDMOS FET
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.
Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.
This device can deliver 40.0 dBm output power with 68% p
NE5531079A Features
* High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 m
