Datasheet4U Logo Datasheet4U.com

NE5531079A Datasheet - Renesas

NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% p.

NE5531079A Features

* High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

* High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)

* High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 m

NE5531079A Datasheet (154.22 KB)

Preview of NE5531079A PDF
NE5531079A Datasheet Preview Page 2 NE5531079A Datasheet Preview Page 3

Datasheet Details

Part number:

NE5531079A

Manufacturer:

Renesas ↗

File Size:

154.22 KB

Description:

7.5v operation silicon rf power ldmos fet.

📁 Related Datasheet

NE5531079A SILICON POWER MOS FET (California Eastern Labs)

NE5532 Internally-compensated dual low noise operational amplifier (Philips)

NE5532 Dual Operational Amplifier (Fairchild Semiconductor)

NE5532 Internally Compensated Dual Low Noise Operational Amplifier (ON Semiconductor)

NE5532 Dual Low-Noise Operational Amplifiers (Texas Instruments)

NE5532A Internally-compensated dual low noise operational amplifier (Philips)

NE5532A Dual Low-Noise Operational Amplifiers (Texas Instruments)

NE5532A Internally Compensated Dual Low Noise Operational Amplifier (ON Semiconductor)

TAGS

NE5531079A 7.5V OPERATION SILICON POWER LDMOS FET Renesas

NE5531079A Distributor