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NE5531079A - 7.5V OPERATION SILICON RF POWER LDMOS FET

NE5531079A Description

DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS .
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.

NE5531079A Features

* High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
* High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 m

NE5531079A Applications

* 460 MHz band radio systems
* 900 MHz band radio systems ORDERING INFORMATION Part Number Order Number Package Marking Supplying Form NE5531079A NE5531079A-A 79A (Pb-Free) W5
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape NE55

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Datasheet Details

Part number
NE5531079A
Manufacturer
Renesas ↗
File Size
154.22 KB
Datasheet
NE5531079A-Renesas.pdf
Description
7.5V OPERATION SILICON RF POWER LDMOS FET

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7.5V OPERATION SILICON POWER LDMOS FET Renesas
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