NE5531079A - 7.5V OPERATION SILICON RF POWER LDMOS FET

Product Overview

Renesas

Datasheet Details

Part number	NE5531079A
Manufacturer	Renesas
File Size	154.22 KB
Description	7.5V OPERATION SILICON RF POWER LDMOS FET
Datasheet	NE5531079A Datasheet
Additional preview pages of the NE5531079A datasheet.

Product details

Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Features

High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
Single supply : VDS = 7.5 V MAX.

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Published: Apr 1, 2016 |