NE55410GR Datasheet, Fet, Renesas

NE55410GR Features

• Fet
• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
• Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS =

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NE55410GR

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📄 Datasheet

Description:

N-channel silicon power ldmos fet. The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplif

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NE55410GR

Renesas

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