Datasheet Details
Part number:
NE55410GR
Manufacturer:
File Size:
231.18 KB
Description:
N-channel silicon power ldmos fet.
Datasheet Details
Part number:
NE55410GR
Manufacturer:
File Size:
231.18 KB
Description:
N-channel silicon power ldmos fet.
NE55410GR, N-CHANNEL SILICON POWER LDMOS FET
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s.
This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral
NE55410GR Features
* Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
* Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz
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