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NE5511279A 7.5V OPERATION SILICON RF POWER LD-MOS FET

NE5511279A Description

DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS .
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.

NE5511279A Features

* High output power
* High power added efficiency
* High linear gain
* Surface mount package
* Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset

NE5511279A Applications

* 460 MHz Radio Systems
* 900 MHz Radio Systems ORDERING INFORMATION Part Number NE5511279A-T1 NE5511279A-T1A Package 79A Marking W3 Supplying Form
* 12 mm wide embossed taping
* Gate pin face the perforation side of the tape
* Qty 1 kpcs/reel
* 1

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Datasheet Details

Part number
NE5511279A
Manufacturer
NEC
File Size
44.51 KB
Datasheet
NE5511279A_NEC.pdf
Description
7.5V OPERATION SILICON RF POWER LD-MOS FET

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7.5V OPERATION SILICON POWER LD-MOS FET NEC
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