NE5511279A Datasheet - NEC

NE5511279A, 7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET

Features

* HIGH OUTPUT POWER: Pout = 40.0 dBm TYP.
, f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP.
, f = 460 MHz, VDS = 7.5 V,
* HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP.
, f = 900 MHz, VDS = 7.5 V, 5.7 MAX.
0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX

Applications

* UHF RADIO SYSTEMS
* CELLULAR REPEATERS
* TWO-WAY RADIOS
* FRS/GMRS

NE5511279A_NEC.pdf