NE5511279A

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

NEC

NE5511279A Features

* HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V,

* HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V, 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX

NE5511279A General Description

NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power ampliﬁer for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% po.

NE5511279A Datasheet (103.99 KB)

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Datasheet Details

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NE5511279A

Manufacturer:

NEC

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103.99 KB

Description:

7.5 v uhf band rf power silicon ld-mos fet.

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NE5511279A 7.5 UHF BAND POWER SILICON LD-MOS FET NEC

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NE5511279A Features

NE5511279A General Description

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