NE5510279A Datasheet (NEC) - 3.5V OPERATION SILICON RF POWER MOSFET

NE5510279A, 3.5V OPERATION SILICON RF POWER MOSFET

The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets.

Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µ m WSi gate lateral MOSFET) and housed in a surface mount package.

This device can deliver 32 dBm out

NE5510279A Features

* HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm

* HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm

* HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm