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NE5510279A - 4.8V OPERATION SILICON RF POWER LDMOS FET

Datasheet Summary

Description

for 4.8 V GSM 1 800 handsets.

Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package.

Features

  • High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : ηadd = 47% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
  • High linear gain : GL = 16.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm) : GL = 10.0.

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Datasheet Details

Part number NE5510279A
Manufacturer NEC
File Size 55.85 KB
Description 4.8V OPERATION SILICON RF POWER LDMOS FET
Datasheet download datasheet NE5510279A Datasheet
Additional preview pages of the NE5510279A datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 33.0 dBm output power with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage. FEATURES • High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm) • High power added efficiency : ηadd = 65% TYP. (VDS = 4.
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