NE5510279A 4.8V OPERATION SILICON RF POWER LDMOS FET

NEC

Description

DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS .
The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.

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Datasheet Specifications

Part number: NE5510279A
Manufacturer: NEC
File Size: 55.85 KB
Datasheet: NE5510279A_NEC.pdf
Description: 4.8V OPERATION SILICON RF POWER LDMOS FET

Features

* High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25

Applications

* Digital cellular phones
* Others : 4.8 V GSM 1 800 class 1 handsets : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications ORDERING INFORMATION Part Number NE5510279A-T1 Package 79A Marking W2 Supplying Form
* 12 mm wide embossed taping
* Gate pin f

NE5510279A Distributors

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NE5510279A 4.8V OPERATION SILICON POWER LDMOS FET NEC

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