NE5510279A Datasheet, Mosfet, NEC

NE5510279A Features

• Mosfet
• HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm
• HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz,

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Part number:

NE5510279A

Manufacturer:

NEC

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📄 Datasheet

Description:

3.5v operation silicon rf power mosfet. The NE5510279A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.5 V GSM1800 handsets

NE5510279A Application

• Applications
• DIGITAL CELLULAR PHONES
• OTHERS ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm

TAGS

NE5510279A

NEC

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