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NE5520279A - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

This page provides the datasheet information for the NE5520279A, a member of the NE5-5202 NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET family.

Datasheet Summary

Description

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.

Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.

Features

  • LOW COST.

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Datasheet Details

Part number NE5520279A
Manufacturer NEC
File Size 166.32 KB
Description NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
Datasheet download datasheet NE5520279A Datasheet
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Full PDF Text Transcription

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NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX. • HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz • SINGLE SUPPLY: 2.8 to 6.0 V A 0.4±0.15 5.7 MAX. 0.2±0.1 0.8±0.15 1.0 MAX. • HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain Gate Drain 0.8 MAX. 3.6±0.2 DESCRIPTION NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.
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