NE5520
Ideal Semiconductor
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Lvdt signal conditioner.
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NE5520279A - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
(NEC)
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP.
NE5520279A-T1 - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
(NEC)
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP.
NE5520379A - 3.2V Operation Silicon RF Power LDMOS FET
(NEC)
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NE5521 - LVDT signal conditioner
(Philips)
Philips Semiconductors Linear Products
Product specification
LVDT signal conditioner
NE/SA/SE5521
DESCRIPTION
The NE/SA/SE5521 is a signal conditi.
NE5521D - LVDT signal conditioner
(Philips)
Philips Semiconductors Linear Products
Product specification
LVDT signal conditioner
NE/SA/SE5521
DESCRIPTION
The NE/SA/SE5521 is a signal conditi.
NE5521N - LVDT signal conditioner
(Philips)
Philips Semiconductors Linear Products
Product specification
LVDT signal conditioner
NE/SA/SE5521
DESCRIPTION
The NE/SA/SE5521 is a signal conditi.
NE5500179A - OPERATION SILICON RF POWER MOSFET
(NEC)
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm TYP at VDS .
NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET
(NEC)
PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm .
NE5510279A - 3.5V OPERATION SILICON RF POWER MOSFET
(NEC)
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = .
NE5511279A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
(NEC)
NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 .