NE5520279A-T1 - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.
Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS
NE5520279A-T1 Features
* LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
* HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX.
* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 G
