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NE5520279A-T1, NE5-5202 Datasheet - NEC

NE5520279A-T1 NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET

NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS .

NE5520279A-T1 Features

* LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

* HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 0X001 4.4 MAX.

* HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 G

NE5-5202-79A.pdf

This datasheet PDF includes multiple part numbers: NE5520279A-T1, NE5-5202. Please refer to the document for exact specifications by model.
NE5520279A-T1 Datasheet Preview Page 2 NE5520279A-T1 Datasheet Preview Page 3

Datasheet Details

Part number:

NE5520279A-T1, NE5-5202

Manufacturer:

NEC

File Size:

166.32 KB

Description:

Necs 3.2 v / 2 w / l&s band medium power silicon ld-mosfet.

Note:

This datasheet PDF includes multiple part numbers: NE5520279A-T1, NE5-5202.
Please refer to the document for exact specifications by model.

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TAGS

NE5520279A-T1 NE5-5202 NECS 3.2 L &S BAND MEDIUM POWER SILICON LD-MOSFET NEC

NE5520279A-T1 Distributor