NE5510179A Overview
Description
The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package.
Key Features
- High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
- High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
- High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm)
- Surface mount package : 5.7 × 5.7 × 1.1 mm MAX
- Single supply : VDS = 3.0 to 6.0 V
