Datasheet Details
| Part number | NE5510179A |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 55.61 KB |
| Description | 3.5V OPERATION SILICON RF POWER MOSFET |
| Datasheet |
 NE5510179A Datasheet
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General Description
for 3.6 V GSM 1 800 and GSM 1 900 handsets.
Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package.
Key Features
- High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
- High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
- High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm).
- Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
- Single supply : VDS = 3.0 to 6.0 V.