Datasheet Summary
PRELIMINARY DATA SHEET
SILICON POWER MOS FET
3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function.
Features
- High output...