Datasheet Summary
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS
Features
- HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
- HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
- HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm
- SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX
- SINGLE SUPPLY: 3.0 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain
Gate
1.5 ± 0.2
Source Drain
1.2 Max
0.8 ± 0.15 4.4 Max 1.0 Max
5.7 Max 0.6 ± 0.15
0.4 ± 0.15 5.7 Max
0.8 Max 3.6 ± 0.2
Bottom View
0.2 ± 0.1
0.9 ±...
