NE5520279A-T1 Overview
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications. Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. APPLICATIONS DIGITAL CELLULAR PHONES:.
NE5520279A-T1 Key Features
- LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
- HIGH OUTPUT POWER: +32 dBm TYP
- HIGH POWER ADDED EFFICIENCY: 45% TYP at 1.8 GHz
- SINGLE SUPPLY: 2.8 to 6.0 V
- HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz