Datasheet Details
| Part number | NE5520279A-T1 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 166.32 KB |
| Description | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| Datasheet | NE5520279A-T1 NE5-5202 Datasheet (PDF) |
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Overview: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | NE5520279A-T1 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 166.32 KB |
| Description | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| Datasheet | NE5520279A-T1 NE5-5202 Datasheet (PDF) |
|
|
|
NEC's NE5520279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the power ampliÞer for mobile and Þxed wireless applications.
Die are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS • DIGITAL CELLULAR PHONES: 3.2 V DCS1800 Handsets • 0.7-2.5 GHz FIXED WIRELESS ACCESS • W-LAN • SHORT RANGE WIRELESS • RETAIL BUSINESS RADIO • SPECIAL MOBILE RADIO ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain Power Added EfÞciency Drain Current Gate-to-Source Leakage Current Saturated Drain Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance UNITS dBm dB % mA nA nA V S V °C/W 15 1.0 1.4 1.3 18 8 40 MIN 30.5 NE5520279A 79A TYP 32.0 10 45 800 100 100 1.9 VGS = 5.0 V VDS = 6.0 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS = 700 mA IDSS = 10 µA Channel-to-Case MAX TEST CONDITIONS f = 1.8 GHz, VDS = 3.2 V, IDSQ = 700 mA, PIN = 25 dBm, except PIN = 5 dBm for Linear Gain ηADD ID IGSS IDSS VTH gm BVDSS RTH Notes: 1.
| Part Number | Description |
|---|---|
| NE5520279A | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| NE5520379A | 3.2V Operation Silicon RF Power LDMOS FET |
| NE5500179A | OPERATION SILICON RF POWER MOSFET |
| NE5510179A | 3.5V OPERATION SILICON RF POWER MOSFET |
| NE5510279A | 4.8V OPERATION SILICON RF POWER LDMOS FET |
| NE5511279A | 7.5V OPERATION SILICON RF POWER LD-MOS FET |
| NE52118 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| NE52118-T1 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| NE56900 | NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE56953E | NPN MEDIUM POWER MICROWAVE TRANSISTOR |