NE52118 Description
PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT.
NE52118 Key Features
- 4-pin super minimold package
- Grounded Emitter Transistor
- Part: NE52118
- Manufacturer: NEC
- Size: 63.90 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| NE52118-T1 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| NE5500179A | OPERATION SILICON RF POWER MOSFET |
| NE5510179A | 3.5V OPERATION SILICON RF POWER MOSFET |
| NE5510279A | 4.8V OPERATION SILICON RF POWER LDMOS FET |
| NE5511279A | 7.5V OPERATION SILICON RF POWER LD-MOS FET |