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NE52118 Datasheet L To S Band Low Noise Amplifier NPN Gaas Hbt

Manufacturer: NEC (now Renesas Electronics)

Overview: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs.

Key Features

  • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω).
  • 4-pin super minimold package.
  • Grounded Emitter Transistor.

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