NE5520379A Datasheet, Fet, NEC

PDF File Details

Part number:

NE5520379A

Manufacturer:

NEC

File Size:

380.65kb

Download:

📄 Datasheet

Description:

3.2v operation silicon rf power ldmos fet.

TAGS

NE5520379A

NEC

📁 Related Datasheet

NE5520 - LVDT Signal Conditioner (Ideal Semiconductor)
.. DataSheet 4 U . .. DataSheet 4 U . .. DataSheet 4 U . .. DataSh.

NE5520279A - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET (NEC)
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP.

NE5520279A-T1 - NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET (NEC)
NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP.

NE5521 - LVDT signal conditioner (Philips)
Philips Semiconductors Linear Products Product specification LVDT signal conditioner NE/SA/SE5521 DESCRIPTION The NE/SA/SE5521 is a signal conditi.

NE5521D - LVDT signal conditioner (Philips)
Philips Semiconductors Linear Products Product specification LVDT signal conditioner NE/SA/SE5521 DESCRIPTION The NE/SA/SE5521 is a signal conditi.

NE5521N - LVDT signal conditioner (Philips)
Philips Semiconductors Linear Products Product specification LVDT signal conditioner NE/SA/SE5521 DESCRIPTION The NE/SA/SE5521 is a signal conditi.

NE5500179A - OPERATION SILICON RF POWER MOSFET (NEC)
4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS .

NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET (NEC)
PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm .

NE5510279A - 3.5V OPERATION SILICON RF POWER MOSFET (NEC)
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = .

NE5511279A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET (NEC)
NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 .