NE5510179A Datasheet, Mosfet, NEC

NE5510179A Features

• Mosfet
• HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm <

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Part number:

NE5510179A

Manufacturer:

NEC

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📄 Datasheet

Description:

3.5v operation silicon rf power mosfet. The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM

NE5510179A Application

• Applications
• DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets
• OTHERS: 1.6 - 2.0 GHz TDMA Applications ELECTRIC

TAGS

NE5510179A

NEC

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