NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET

NEC

NE5510179A Datasheet Preview — Preview of NE5510179A PDF

Datasheet Details

Part number	NE5510179A
Manufacturer	NEC
File Size	55.61 KB
Description	3.5V OPERATION SILICON RF POWER MOSFET
Datasheet	NE5510179A_NEC.pdf

NE5510179A Product details

Description

The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets.Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package.The device can deliver 30.0 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power con

Features

High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm).
Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
Single supply : VDS = 3.0 to 6.0 V.

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Published: Jul 9, 2007 |