Datasheet4U Logo Datasheet4U.com

NE5510179A 3.5V OPERATION SILICON RF POWER MOSFET

NE5510179A Description

PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTI.
The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.

NE5510179A Features

* High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
* High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
* High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 m

NE5510179A Applications

* Digital cellular phones
* Others : 3.6 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage amplifier : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications ORDERING INFORMATION Part Number NE5510179A-T1 Package 79A Marking W1 Supplyin

📥 Download Datasheet

Preview of NE5510179A PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE5510179A
Manufacturer
NEC
File Size
55.61 KB
Datasheet
NE5510179A_NEC.pdf
Description
3.5V OPERATION SILICON RF POWER MOSFET

📁 Related Datasheet

  • NE5512 - Dual high-performance operational amplifier (Philips)
  • NE5512D - Dual high-performance operational amplifier (Philips)
  • NE5512N - Dual high-performance operational amplifier (Philips)
  • NE5514 - Quad high-performance operational amplifier (Philips)
  • NE5514D - Quad high-performance operational amplifier (Philips)
  • NE5514N - Quad high-performance operational amplifier (Philips)
  • NE5517 - Dual operational transconductance amplifier (Philips)
  • NE5517A - Dual operational transconductance amplifier (Philips)

📌 All Tags

3.5V OPERATION SILICON POWER MOSFET NEC
NEC NE5510179A-like datasheet