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NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET

Datasheet Summary

Description

for 3.6 V GSM 1 800 and GSM 1 900 handsets.

Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package.

Features

  • High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
  • High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
  • High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm).
  • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
  • Single supply : VDS = 3.0 to 6.0 V.

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Datasheet Details

Part number NE5510179A
Manufacturer NEC
File Size 55.61 KB
Description 3.5V OPERATION SILICON RF POWER MOSFET
Datasheet download datasheet NE5510179A Datasheet
Additional preview pages of the NE5510179A datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function. FEATURES • High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.
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