NE5510179A Datasheet - NEC

NE5510179A, 3.5V OPERATION SILICON RF POWER MOSFET

PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS

Features

* HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
* HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm
* HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
* SINGLE

Applications

* DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets
* OTHERS: 1.6 - 2.0 GHz TDMA Applications ELECTRICAL CHARACTERISTICS (TA PART NUMBER PACKAGE OUTLINE SYMBOLS IGSS IDSS VTH gm RDS (ON) BVDSS CHARACTERISTICS Gate-to-Source Leakage Current Drain-to-Source Leakage Cur

NE5510179A_NEC.pdf