NE5500179A Datasheet - NEC

NE5500179A, OPERATION SILICON RF POWER MOSFET

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS

Features

* HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
* HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
* HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm

Applications

* DIGITAL CELLULAR PHONES
* DIGITAL CORDLESS PHONES
* OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS UNITS MIN IGSS Gate to Source Leakage Current nA - IDSS Drain to Source Leakage Current nA - VTH Gate Thresh

NE5500179A-NEC.pdf