Datasheet4U Logo Datasheet4U.com

NE5500179A OPERATION SILICON RF POWER MOSFET

NE5500179A Description

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS .
The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.

NE5500179A Features

* HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
* HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
* HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm

NE5500179A Applications

* DIGITAL CELLULAR PHONES
* DIGITAL CORDLESS PHONES
* OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS UNITS MIN IGSS Gate to Source Leakage Current nA - IDSS Drain to Source Leakage Current nA - VTH Gate Thresh

📥 Download Datasheet

Preview of NE5500179A PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE5500179A
Manufacturer
NEC
File Size
40.73 KB
Datasheet
NE5500179A-NEC.pdf
Description
OPERATION SILICON RF POWER MOSFET

📁 Related Datasheet

  • NE5512 - Dual high-performance operational amplifier (Philips)
  • NE5512D - Dual high-performance operational amplifier (Philips)
  • NE5512N - Dual high-performance operational amplifier (Philips)
  • NE5514 - Quad high-performance operational amplifier (Philips)
  • NE5514D - Quad high-performance operational amplifier (Philips)
  • NE5514N - Quad high-performance operational amplifier (Philips)
  • NE5517 - Dual operational transconductance amplifier (Philips)
  • NE5517A - Dual operational transconductance amplifier (Philips)

📌 All Tags

OPERATION SILICON POWER MOSFET NEC
NEC NE5500179A-like datasheet