NE5500179A Datasheet, Mosfet, NEC

NE5500179A Features

  • Mosfet
  • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
  • HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GH

PDF File Details

Part number:

NE5500179A

Manufacturer:

NEC

File Size:

40.73kb

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📄 Datasheet

Description:

Operation silicon rf power mosfet. The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1

Datasheet Preview: NE5500179A 📥 Download PDF (40.73kb)
Page 2 of NE5500179A Page 3 of NE5500179A

NE5500179A Application

  • Applications
  • DIGITAL CELLULAR PHONES
  • DIGITAL CORDLESS PHONES
  • OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMB

TAGS

NE5500179A
OPERATION
SILICON
POWER
MOSFET
NEC

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