NE5550779A Datasheet - Renesas

NE5550779A Silicon Power LDMOS FET

NE5550779A Features

* High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)

* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)

* High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 m

Datasheet Details

NE5550779A

3.15 MB

Silicon power ldmos fet.

📁 Related Datasheet

NE5550234 Silicon Power MOSFET (Renesas)

NE5550279A Silicon Power LDMOS FET (Renesas)

NE5550979A Silicon Power LDMOS FET (Renesas)

NE555 CMOS GENERAL PURPOSE TIMER (HTC)

NE555 Precision Timer (Texas Instruments)

NE555 General-purpose single bipolar timer (ST Microelectronics)

NE555 Single Timer (Fairchild)

NE555 Precision Timer (Diodes)

TAGS

NE5550779A NE5550779A Silicon Power LDMOS FET Renesas

NE5550779A Distributor