NE5550779A Datasheet, Fet, Renesas

NE5550779A Features

  • Fet
  • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDse

PDF File Details

Part number:

NE5550779A

Manufacturer:

Renesas ↗

File Size:

3.15MB

Download:

📄 Datasheet

Description:

Silicon power ldmos fet.

Datasheet Preview: NE5550779A 📥 Download PDF (3.15MB)
Page 2 of NE5550779A Page 3 of NE5550779A

NE5550779A Application

  • Applications
  • 150 MHz Band Radio System
  • 460 MHz Band Radio System
  • 900 MHz Band Radio System ORDERING INFORMATION Part

TAGS

NE5550779A
Silicon
Power
LDMOS
FET
Renesas

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Stock and price

California Eastern Laboratories (CEL)
RF MOSFET LDMOS 7.5V 79A
DigiKey
NE5550779A-A
0 In Stock
0
Unit Price : $0
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