NE5550779A - Silicon Power LDMOS FET
NE5550779A Features
* High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
* High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 m
