NE5550279A Datasheet - Renesas

NE5550279A, Silicon Power LDMOS FET

Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012

Features

* High Output Power
* High power added efficiency
* High Linear gain
* High ESD tolerance : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) : GL = 22.5 dB TYP. (VD

Applications

* 150 MHz Band Radio System
* 460 MHz Band Radio System
* 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550279A Order Number NE5550279A-A Package 79A (Pb Free) Marking W7 Supplying Form
* 12 mm wide embossed taping
* Gate pin faces the pe

NE5550279A_Renesas.pdf