BLF8G22LS-220 Datasheet - Ampleon

BLF8G22LS-220 Power LDMOS transistor

220 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%).

BLF8G22LS-220 Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for low memory effects providing excellent pre-distortability

* Internally matched for ease of use

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regardin

BLF8G22LS-220-Ampleon.pdf

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Datasheet Details

Part number:

BLF8G22LS-220

Manufacturer:

Ampleon

File Size:

348.65 KB

Description:

Power ldmos transistor.

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BLF8G22LS-220 BLF8G22LS-220 Power LDMOS transistor Ampleon

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