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BLF8G27LS-140V Datasheet - NXP

BLF8G27LS-140V - Power LDMOS transistor

140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) Gp D ACPR

BLF8G27LS-140V Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (100 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memor

BLF8G27LS-140V-NXP.pdf

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Datasheet Details

Part number:

BLF8G27LS-140V

Manufacturer:

NXP ↗

File Size:

130.82 KB

Description:

Power ldmos transistor.

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