BLF8G27LS-100 Datasheet - Ampleon

BLF8G27LS-100, Power LDMOS transistor

BLF8G27LS-100 Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Details

Part number:

BLF8G27LS-100

Manufacturer:

Ampleon

File Size:

333.55 KB

Description:

Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2500 MHz to 2700 MHz)

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2500 to 2700 900 28 25 17 28 

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BLF8G27LS-100 Power LDMOS transistor Ampleon

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