BLF872 Datasheet - NXP Semiconductors

BLF872 UHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter ap.

BLF872 Features

* s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 43 % x Third order intermodulation distortion IMD3 =

* 28 dBc s Typical DVB perf

BLF872_NXPSemiconductors.pdf