BLF872 - UHF power LDMOS transistor

NXP Semiconductors

Datasheet Details

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 43 % x Third order intermodulation distortion IMD3 =.
28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 30 % x Third order i.

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Published: Dec 13, 2010 |