Datasheet Specifications
- Part number
- BLF872
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 179.58 KB
- Datasheet
- BLF872_NXPSemiconductors.pdf
- Description
- UHF power LDMOS transistor
Description
BLF872 UHF power LDMOS transistor Rev.01 * 20 February 2006 Product data sheet 1.Product profile 1.1 General .
Features
* s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efficiency ηD = 43 % x Third order intermodulation distortion IMD3 =Applications
* and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. CAUTION This device is sensitive to ElectroStatic Discharge (BLF872 Distributors
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