BLF884P datasheet, transistor equivalent, NXP Semiconductors

BLF884P Features and benefits

* Excellent ruggedness
* Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
* High power gain
* High efficiency
* Designed for broadband op.

BLF884P Application

and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter a.

BLF884P Description

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF perform.

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BLF884P

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BLF884P Datasheet, transistor equivalent, NXP Semiconductors

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BLF884P Features and benefits

BLF884P Application

BLF884P Description