BLF884P Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF884P Features

* Excellent ruggedness

* Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W

* High power gain

* High efficiency

* Designed for broadband operation (470 MHz to 860 MHz)

* Internal input matching for high gain and optimum broadband operation

* Excellent reliabili

BLF884P General Description

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mo.

BLF884P Datasheet (185.05 KB)

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Datasheet Details

Part number:

BLF884P

Manufacturer:

NXP ↗ Semiconductors

File Size:

185.05 KB

Description:

Uhf power ldmos transistor.

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BLF884P UHF power LDMOS transistor NXP Semiconductors

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BLF884P Features

BLF884P General Description

Datasheet Details

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