BLF871S, BLF871 - UHF power LDMOS transistor

NXP Semiconductors

Datasheet Details

Part number	BLF871S, BLF871
Manufacturer	NXP ↗ Semiconductors
File Size	203.23 KB
Description	UHF power LDMOS transistor
Datasheet	BLF871_NXPSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLF871S, BLF871. Please refer to the document for exact specifications by model.

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =.
35 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W Power gain = 22 dB Drain efficiency = 33 % Third order intermodulation distortion.

📁 BLF871S Similar Datasheet

Other Datasheets by NXP Semiconductors

Published: Jan 27, 2016 |