BLF871S Datasheet - NXP Semiconductors

BLF871S UHF power LDMOS transistor

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical .

BLF871S Features

* 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =

* 35 dBc

* DVB performance at 858 M

BLF871S Datasheet (203.23 KB)