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BLF871S Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF871S Features

* 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion =

* 35 dBc

* DVB performance at 858 M

BLF871S General Description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical .

BLF871S Datasheet (203.23 KB)

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BLF871S

Manufacturer:

NXP ↗ Semiconductors

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203.23 KB

Description:

Uhf power ldmos transistor.

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BLF871S UHF power LDMOS transistor NXP Semiconductors

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BLF871S Features

BLF871S General Description

Datasheet Details

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