BLF878 Datasheet - NXP Semiconductors

BLF878 UHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter ap.

BLF878 Features

* I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efﬁciency = 46 % N Third order intermodulation distortion =

* 35 dBc I DVB performance at 858 MHz, a drain-sourc

BLF878 Datasheet (182.68 KB)