Datasheet Specifications
- Part number
- BLF878
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 182.68 KB
- Datasheet
- BLF878_NXPSemiconductors.pdf
- Description
- UHF power LDMOS transistor
Description
BLF878 UHF power LDMOS transistor Rev.02 * 15 June 2009 www.DataSheet4U.com Product data sheet 1.Product profile 1.1 General .
Features
* I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efficiency = 46 % N Third order intermodulation distortion =Applications
* and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 42 V inBLF878 Distributors
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