BLF878 Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF878 Features

* I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efﬁciency = 46 % N Third order intermodulation distortion =

* 35 dBc I DVB performance at 858 MHz, a drain-sourc

BLF878 General Description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter ap.

BLF878 Datasheet (182.68 KB)

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BLF878

Manufacturer:

NXP ↗ Semiconductors

File Size:

182.68 KB

Description:

Uhf power ldmos transistor.

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BLF878 UHF power LDMOS transistor NXP Semiconductors

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BLF878 Features

BLF878 General Description

Datasheet Details

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