BLF878 - UHF power LDMOS transistor

NXP Semiconductors

Datasheet Details

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efﬁciency = 46 % N Third order intermodulation distortion =.
35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 dB N Drain efﬁciency = 32 % N Third order intermodulation distortion =.
32 dBc.

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Published: Jun 18, 2010 |