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BLF888B - UHF power LDMOS transistor

NXP Semiconductors

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Datasheet Details

Part number	BLF888B
Manufacturer	NXP ↗ Semiconductors
File Size	319.32 KB
Description	UHF power LDMOS transistor
Datasheet	BLF888B-NXPSemiconductors.pdf

BLF888B Product details

Description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

Features

Excellent ruggedness.
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (470 MHz to 860 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

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Published: Jan 27, 2016 |