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BLF888B Datasheet - NXP Semiconductors

UHF power LDMOS transistor

BLF888B Features

* Excellent ruggedness

* Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W

* High power gain

* High efficiency

* Designed for broadband operation (470 MHz to 860 MHz)

* Internal input matching for high gain and optimum broadband operation

* Excellent reliabili

BLF888B General Description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mo.

BLF888B Datasheet (319.32 KB)

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Datasheet Details

Part number:

BLF888B

Manufacturer:

NXP ↗ Semiconductors

File Size:

319.32 KB

Description:

Uhf power ldmos transistor.

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GeneSic Semiconductor Inc

BR64

0 In Stock

Unit Price : $0

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BLF888B UHF power LDMOS transistor NXP Semiconductors

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BLF888B Features

BLF888B General Description

Datasheet Details

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