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BLF888DS

Power LDMOS transistor

BLF888DS Features

* High efficiency

* High power gain

* Excellent ruggedness (VSWR  40 : 1 through all phases)

* Excellent thermal stability

* Integrated ESD protection

* One Doherty design covers the

BLF888DS General Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal .

BLF888DS Datasheet (357.79 KB)

Preview of BLF888DS PDF

Datasheet Details

Part number:

BLF888DS

Manufacturer:

Ampleon

File Size:

357.79 KB

Description:

Power ldmos transistor.

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TAGS

BLF888DS Power LDMOS transistor Ampleon

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