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BLF888DS, BLF888D Power LDMOS transistor

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Description

BLF888D; BLF888DS UHF power LDMOS transistor Rev.4 * 18 February 2016 Product data sheet 1.Product profile 1.1 General .
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

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This datasheet PDF includes multiple part numbers: BLF888DS, BLF888D. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF888DS, BLF888D
Manufacturer
Ampleon
File Size
357.79 KB
Datasheet
BLF888D-Ampleon.pdf
Description
Power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF888DS, BLF888D.
Please refer to the document for exact specifications by model.

Features

* High efficiency
* High power gain
* Excellent ruggedness (VSWR  40 : 1 through all phases)
* Excellent thermal stability
* Integrated ESD protection
* One Doherty design covers the

Applications

* The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [

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