BLF888D Datasheet - Ampleon

BLF888D Power LDMOS transistor

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal .

BLF888D Features

* High efficiency

* High power gain

* Excellent ruggedness (VSWR  40 : 1 through all phases)

* Excellent thermal stability

* Integrated ESD protection

* One Doherty design covers the

BLF888D Datasheet (357.79 KB)