BLF888 - UHF Power LDMOS Transistor

NXP

Datasheet Details

Part number	BLF888
Manufacturer	NXP ↗
File Size	88.98 KB
Description	UHF Power LDMOS Transistor
Datasheet	BLF888_PhilipsSemiconductors.pdf

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efﬁciency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Average output power = 110 W N Power gain = 20 dB N Drain efﬁciency = 30 % N Shoulder distance =.
32 dBc (4.3 MHz from center frequ.

📁 BLF888 Similar Datasheet

Other Datasheets by NXP

Published: Aug 31, 2009 |