BLF888 Datasheet - NXP

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BLF888 UHF Power LDMOS Transistor

www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev.01 * 16 December 2008 Objective data sheet 1.Product proﬁle 1.1 General descript.
A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

BLF888_PhilipsSemiconductors.pdf

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Datasheet Details

Part number:

BLF888

Manufacturer:

NXP ↗

File Size:

88.98 KB

Description:

UHF Power LDMOS Transistor

Features

* I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efﬁciency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source volt

Applications

* and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Application informatio

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