UHF Datasheet | Specifications & PDF Download

NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

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BB179B UHF variable capacitance diode Rev. 3 — 5 September 2011 Product data sheet 1. Product profile 1.1 General description The BB179B is a varia

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BF244,A,B,C CASE 29-02, STYLE 22 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Fo

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NTE10 Silicon NPN Transistor UHF Low Noise Wide–Band Amplifier Features: D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz) D High Power Gain: MAG = 14dB

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ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

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www.DataSheet4U.com Datum 981218 PRODUKTINFORMATION HÄMTFAX 08-580 941 14 FAX ON DEMAND +46 8 580 941 14 INTERNET http://www.elfa.se TEKNISK INFORM

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: S-AU4 TOSHIBA RF POWER AMPLIFIER MODULE UHF POWER AMPLIFIER MODULE (HAM SSB/FM) FEATURES . Output Power P ^17W . Minimum Gain GP =19.2dB . Ef

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DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB405B UHF variable capacitance diode Product specification Supersedes data of April 1992 File und

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BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost

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Features • Transparent RF Receiver ICs for 315 MHz (ATA8201) and 433.92 MHz (ATA8202) With High Receiving Sensitivity • Fully Integrated PLL With Low

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Features • Frequency Receiving Range of (3 Versions) – f0 = 312.5 MHz to 317.5 MHz or – f0 = 431.5 MHz to 436.5 MHz or – f0 = 868 MHz to 870 MHz 30 dB

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ATA5831/ATA5832/ATA5833 UHF ASK/FSK Transceiver SUMMARY DATASHEET This is a summary document. The complete document is available under NDA. For more

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Prelimin

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DATASHEET AX5042 Version 2.6 2 Document Document Document Product Type Status Version Datasheet Version 2.6 AX5042 Version 2.6 Datasheet AX5042

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MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Two devices are incorporated in

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