NXP Semiconductors BA481
The diode is suitable for mounting on a 2 E (5.08 mm) pitch.| Part No. | BA481 |
|---|---|
| Datasheet | BA481 Download |
| Manufacturer |  NXP Semiconductors |
| Description | UHF mixer diode |
| Buy | Stock & Price |
FEATURES
● Low forward voltage● Hermetically-sealed leaded glass package
● Low diode capacitance.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package.APPLICATIONS
● UHF mixer● Sampling circuits
● Modulators
● Phase detection. handbook, halfpakge a MAM193 Cathode indicated by a grey band. Fig.1 Simplified outline (SOD68; DO-34), and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VR continuous reverse voltage IF continuous forward current Tstg storage temperature Tj junction temperature MIN. − − −65 − MAX. 4 30 +125 100 UNIT V mA °C °C 1996 Mar 19 2 Philips Semiconductors UHF mixer diode Product specification BA481
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR reverse current rs series resistance F noise figure Cd diode capacitance CONDITIONS MAX. see Fig.2 IF = 1 mA 450 IF = 10 mA 600 VR = 4 V; see Fig.3 10 VR = 4 V; Tamb = 60 °C; see Fig.3 100 f = 1 kHz; IF = 5 mA 13 f = 900 MHz; note 1 8 f = 1 MHz; VR = 0 V; see Fig.4 1.1 Note 1.
