NXP Semiconductors BA484
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BA484 |
|---|---|
| Datasheet | BA484 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Band-switching diodes |
| Buy | Stock & Price |
FEATURES
● Continuous reverse voltage: max. 35 V● Continuous forward current: max. 100 mA
● Low diode capacitance: max. 1.0 to 1.6 pF
● Low diode forward resistance: max. 0.7 to 1.2 Ω. The diodes are type branded. BA482; BA483; BA484
DESCRIPTION
Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. k handbook, halfpage a MAM156 APPLICATION● VHF television tuners. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 35 100 +150 150 V mA °C °C UNIT
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tamb = 75 °C Cd diode capacitance BA482 BA483 BA484 rD diode forward resistance BA482 BA483 BA484 IF = 3 mA; f = 200 MHz; see...
