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ON Semiconductort
JFET VHF/UHF Amplifiers
N–Channel — Depletion
BF245A BF245B
MAXIMUM RATINGS Rating
Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Storage Channel Temperature Range
3 DRAIN
Symbol VDS VDG VGS ID IG(f) PD
Tstg
Value ±30 30 30 100 10 350 2.8 –65 to +150
3 DRAIN
Unit Vdc Vdc Vdc mAdc mAdc mW mW/°C °C
2 GATE
STYLE 22 1 SOURCE
1 GATE
STYLE 23 2 SOURCE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0)
Gate–Source (VDS = 15 Vdc, ID = 200 µAdc)
V(BR)GSS
30
BF245(1)
VGS 0.4
BF245A, BF244A(2)
0.4
BF245B, BF244B
1.6
BF245C
3.
BF245A Datasheet
