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BLF881S, BLF881 UHF Power LDMOS Transistor

BLF881S Description

BLF881; BLF881S UHF power LDMOS transistor Rev.01 * 10 December 2009 Preliminary data sheet 1.Product profile 1.1 General .
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

BLF881S Features

* www. DataSheet4U. com
* 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 140 W ‹ Power gain = 21 dB ‹ Drain efficiency = 49 % ‹ Third order intermodulation distortion =
* 34 dBc
* DVB

BLF881S Applications

* and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 50 V in a common-source 860 MHz test circuit. Mo

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This datasheet PDF includes multiple part numbers: BLF881S, BLF881. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
BLF881S, BLF881
Manufacturer
NXP ↗
File Size
243.29 KB
Datasheet
BLF881_NXP.pdf
Description
UHF Power LDMOS Transistor
Note
This datasheet PDF includes multiple part numbers: BLF881S, BLF881.
Please refer to the document for exact specifications by model.

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UHF Power LDMOS Transistor NXP
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