BLF881S Datasheet | NXP Semiconductors

description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Typical performance RF performance at VDS = 50 V in a mon-source 860 MHz test circuit. Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.1 858 - PL(PEP) 140 - PL(AV) Gp (W) 33 21 21 ηD 49 34 IMD3 - 34 - IMDshldr (d Bc) - 33[1] (W) (W) (d B) (%) (d Bc) Measured [d Bc] with delta marker at 4.3 MHz from center frequency. CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features .. - 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 140 W ‹ Power gain = 21 d B ‹ Drain efficiency = 49 % ‹ Third order intermodulation distortion = - 34 d Bc - DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Average output power = 33 W ‹ Power gain = 21 d B ‹ Drain efficiency = 34 % ‹ Shoulder distance = - 33 d Bc (4.3 MHz from center frequency) - Integrated ESD protection - Excellent ruggedness - High power gain NXP Semiconductors BLF881; BLF881S UHF power LDMOS transistor - - - - High efficiency Excellent reliability Easy power control pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3 Applications - munication transmitter applications in the UHF band - Industrial applications in the UHF band 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF881...