BLF881S
Overview
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz.
- 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
- Peak envelope power load power = 140 W
- Power gain = 21 dB
- Drain efficiency = 49 %
- Third order intermodulation distortion = -34 dBc
- DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
- Average output power = 33 W
- Drain efficiency = 34 %
- Shoulder distance = -33 dBc (4.3 MHz from center frequency)
- Integrated ESD protection
